<inline-formula><tex-math notation="LaTeX">$\beta$</tex-math></inline-formula>-Ga₂O₃ in Power Electronics Converters: Opportunities &amp; Challenges

In this work, the possibility of using different generations of <inline-formula><tex-math notation="LaTeX">$\beta$</tex-math></inline-formula>-Ga₂O₃ as an ultra-wide-bandgap power semiconductor device for high power converter applications is explored. The competitiveness of <in...

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Autors principals:	Saeed Jahdi, Akhil S. Kumar, Matthew Deakin, Phil C. Taylor, Martin Kuball
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2024-01-01
Col·lecció:	IEEE Open Journal of Power Electronics
Matèries:	<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$\beta$</tex-math> </inline-formula> </named-content>-Ga<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_2$</tex-math> </inline-formula> </named-content>0<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_3$</tex-math> </inline-formula> </named-content> diamond gallium oxide HVDC converters ultra-wide-bandgap
Accés en línia:	https://ieeexplore.ieee.org/document/10496151/
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