Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors
We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of <inline-formula><tex-math notation="LaTeX">${\rm{G}}{{\rm{e}}_{1 - x}}{\rm{S}}{{\rm{n}}_x}$</t...
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| Główni autorzy: | , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
IEEE
2020-01-01
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| Seria: | IEEE Photonics Journal |
| Hasła przedmiotowe: | |
| Dostęp online: | https://ieeexplore.ieee.org/document/9099040/ |
| Etykiety: |
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