Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning

The tunnel junction (TJ) is a crucial structure for numerous III-nitride devices. A fundamental challenge for TJ design is to minimize the TJ resistance at high current densities. In this work, we propose the asymmetric p-AlGaN/i-InGaN/n-AlGaN TJ structure for the first time. P-AlGaN/i-InGaN/n-AlGaN...

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Autors principals:	Rongyu Lin, Peng Han, Yue Wang, Ronghui Lin, Yi Lu, Zhiyuan Liu, Xiangliang Zhang, Xiaohang Li
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2021-09-01
Col·lecció:	Nanomaterials
Matèries:	tunnel junction machine learning III-nitride
Accés en línia:	https://www.mdpi.com/2079-4991/11/10/2466
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