Growth of aluminum nitride on a silicon nitride substrate for hybrid photonic circuits

Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility χ ^(2) allows single-photon generation. We have grown AlN thin films on silicon nitride (Si _3 N _4 ) v...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	G Terrasanta, M Müller, T Sommer, S Geprägs, R Gross, M Althammer, M Poot
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IOP Publishing 2021-01-01
Цуврал:	Materials for Quantum Technology
Нөхцлүүд:	hybrid photonic circuits photonic integrated circuits reactive sputtering aluminum nitride silicon nitride thin film
Онлайн хандалт:	https://doi.org/10.1088/2633-4356/ac08ed
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!