Growth of aluminum nitride on a silicon nitride substrate for hybrid photonic circuits
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility χ ^(2) allows single-photon generation. We have grown AlN thin films on silicon nitride (Si _3 N _4 ) v...
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| Asıl Yazarlar: | , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IOP Publishing
2021-01-01
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| Seri Bilgileri: | Materials for Quantum Technology |
| Konular: | |
| Online Erişim: | https://doi.org/10.1088/2633-4356/ac08ed |
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