Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning

The tunnel junction (TJ) is a crucial structure for numerous III-nitride devices. A fundamental challenge for TJ design is to minimize the TJ resistance at high current densities. In this work, we propose the asymmetric p-AlGaN/i-InGaN/n-AlGaN TJ structure for the first time. P-AlGaN/i-InGaN/n-AlGaN...

Descripción completa

Detalles Bibliográficos

Autores principales:	Rongyu Lin, Peng Han, Yue Wang, Ronghui Lin, Yi Lu, Zhiyuan Liu, Xiangliang Zhang, Xiaohang Li
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	MDPI AG 2021-09-01
Colección:	Nanomaterials
Materias:	tunnel junction machine learning III-nitride
Acceso en línea:	https://www.mdpi.com/2079-4991/11/10/2466
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!