Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. The rectifying dr...

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Hlavní autoři:	Tae-Hyeon Kim, Won-Ho Jang, Jun-Hyeok Yim, Ho-Young Cha
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2021-03-01
Edice:	Micromachines
Témata:	AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode
On-line přístup:	https://www.mdpi.com/2072-666X/12/3/291
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