Perspective on Ferroelectric and Nonferroelectric Low‐Dimensional Metal Halide Perovskites for Memristor Technology

Metal‐oxide‐based resistive switching (RS) memristors have been extensively investigated, but their practical application is often hindered by complex fabrication processes and high‐power consumption. Metal halide perovskites have emerged as promising alternatives due to their low‐cost fabrication,...

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Hauptverfasser:	Ranita Samanta, Rishukumar Panday, Giulia Ludovisi, Ramamoorthy Boomishankar, Daniele Cortecchia
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Wiley-VCH 2026-06-01
Schriftenreihe:	Small Structures
Schlagworte:	ferroelectric and nonferroelectric low‐dimensional hybrid‐halide perovskite memristor molecular engineering resistive switching memory
Online-Zugang:	https://doi.org/10.1002/sstr.70505
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