Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse

Memristive devices such as resistive switching memories and artificial synapses have emerged as promising technologies to overcome the technological challenges associated with the von Neumann bottleneck. Recently, lead halide perovskites have drawn substantial research attention as the candidate mat...

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Detalhes bibliográficos

Principais autores:	Bo Wei Zhang, Chun‐Ho Lin, Shruti Nirantar, EQ Han, Yurou Zhang, Zitong Wang, Miaoqiang Lyu, Lianzhou Wang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2024-06-01
coleção:	Small Structures
Assuntos:	artificial synapses halide perovskites lead free memristors resistive switching memories toxicities
Acesso em linha:	https://doi.org/10.1002/sstr.202300524
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