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Halide perovskite memristors for optoelectronic memory and computing applications

Abstract Halide perovskites are considered as promising memristive materials for next‐generation optoelectronic devices. This review concisely summarizes the recent development of halide perovskite memristors and highlights their advancements in optoelectronic applications: light‐induced low power s...

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Bibliografiset tiedot
Päätekijät: Xiaohan Zhang, Yue Wang, Xiaoning Zhao, Zhongqiang Wang, Xuanyu Shan, Haiyang Xu, Yichun Liu
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Wiley 2024-12-01
Sarja:Information & Functional Materials
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Linkit:https://doi.org/10.1002/ifm2.23
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