A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer
A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large conductivity due to an overabundance of carriers for reve...
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| Автори: | , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2023-03-01
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| Серія: | Micromachines |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2072-666X/14/3/646 |
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