QR code

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (E<sub>off</sub>) and turn-off time (T<sub>off</sub>). The electrical properties of the pro...

Volledige beschrijving

Bewaard in:
Hoofdauteurs: Ying Wang, Cheng-Hao Yu, Hong-Kai Mao, Xue Wu, Fang-Wen Su, Xing-Ji Li, Jian-Qun Yang
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: IEEE 2020-01-01
Reeks:IEEE Journal of the Electron Devices Society
Onderwerpen:
4H-SiC
heterojunction
insulated gate bipolar transistor (IGBT)
turn-off loss
turn-off time
breakdown voltage
Online toegang:https://ieeexplore.ieee.org/document/9187894/
Tags: Voeg label toe
Geen labels, Wees de eerste die dit record labelt!

Gelijkaardige items