Design and Simulation of G/Si Schottky Junction Solar Cell with Graphene Quantum Dots as Potential Barrier

<p>Graphene (G)/Si Schottky junction solar cells (SJSCs) suffer from very low conversion efficiency due to the weak potential barrier between graphene and Si layers. In this study, a G/Si SJSC with an interlayer of graphene quantum dots (GQDs) is introduced. GQDs act as a potential barrier, resultin...

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Principais autores:	Amir Abbas Pourali, Hassan Rasooli saghai, Mohammad Ali Tavakoli Ghazi Jahani, Babak Sakaki, Shahram Mojtahedzadeh
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	Islamic Azad University, Marvdasht Branch 2025-12-01
סדרה:	Journal of Optoelectronical Nanostructures
נושאים:	graphene graphene quantum dot schottky junction
גישה מקוונת:	https://sanad.iau.ir/journal/jopn/Article/1217740
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!