Design and Simulation of G/Si Schottky Junction Solar Cell with Graphene Quantum Dots as Potential Barrier

<p>Graphene (G)/Si Schottky junction solar cells (SJSCs) suffer from very low conversion efficiency due to the weak potential barrier between graphene and Si layers. In this study, a G/Si SJSC with an interlayer of graphene quantum dots (GQDs) is introduced. GQDs act as a potential barrier, resultin...

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Bibliografiset tiedot

Päätekijät:	Amir Abbas Pourali, Hassan Rasooli saghai, Mohammad Ali Tavakoli Ghazi Jahani, Babak Sakaki, Shahram Mojtahedzadeh
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Islamic Azad University, Marvdasht Branch 2025-12-01
Sarja:	Journal of Optoelectronical Nanostructures
Aiheet:	graphene graphene quantum dot schottky junction
Linkit:	https://sanad.iau.ir/journal/jopn/Article/1217740
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