Electrical Characteristics of Single Layer Graphene Ribbons in a Wide Temperature Range
This paper provides electrical characterization of single layer graphene ribbon devices defined as back-gated graphene transistors. The two-terminal back-gated graphene ribbon devices were fabricated on a conventional Si substrate covered by a 90 nm-thick thermal SiO2. The chemical vapor deposition...
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| Автори: | , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Kaunas University of Technology
2023-12-01
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| Серія: | Medžiagotyra |
| Предмети: | |
| Онлайн доступ: | https://matsc.ktu.lt/index.php/MatSc/article/view/33700 |
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