Electrical Characteristics of Single Layer Graphene Ribbons in a Wide Temperature Range
This paper provides electrical characterization of single layer graphene ribbon devices defined as back-gated graphene transistors. The two-terminal back-gated graphene ribbon devices were fabricated on a conventional Si substrate covered by a 90 nm-thick thermal SiO2. The chemical vapor deposition...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Kaunas University of Technology
2023-12-01
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| Series: | Medžiagotyra |
| Assuntos: | |
| Acceso en liña: | https://matsc.ktu.lt/index.php/MatSc/article/view/33700 |
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