Código QR (código de barras bidimensional)

Analysis of Leakage Current of HfO<sub>2</sub>/TaO<sub><i>x</i></sub>-Based 3-D Vertical Resistive Random Access Memory Array

Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previous approach to evaluating the performance of 3-D...

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Principais autores: Zhisheng Chen, Renjun Song, Qiang Huo, Qirui Ren, Chenrui Zhang, Linan Li, Feng Zhang
פורמט: Artigo
שפה:Inglês
יצא לאור: MDPI AG 2021-05-01
סדרה:Micromachines
נושאים:
resistive random access memory (RRAM)
3-D integration
self-selective cell (SSC)
sneak path
leakage current
גישה מקוונת:https://www.mdpi.com/2072-666X/12/6/614
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