Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
Resistive random–access memory (RRAM) for neuromorphic systems has received significant attention because of its advantages, such as low power consumption, high–density structure, and high–speed switching. However, variability occurs because of the stochastic nature of conductive filaments (CFs), pr...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2022-09-01
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| coleção: | Nanomaterials |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2079-4991/12/19/3334 |
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