Analysis of Leakage Current of HfO<sub>2</sub>/TaO<sub><i>x</i></sub>-Based 3-D Vertical Resistive Random Access Memory Array
Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previous approach to evaluating the performance of 3-D...
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| Автори: | , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2021-05-01
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| Серія: | Micromachines |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2072-666X/12/6/614 |
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