Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination
This work reports the fabrication and characterization of a NiOx/β-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV breakdown voltage, ultra-low reverse current leakage under high r...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , |
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| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
AIP Publishing LLC
2025-01-01
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| Cyfres: | AIP Advances |
| Mynediad Ar-lein: | http://dx.doi.org/10.1063/5.0251069 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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