Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE
In this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky superjunction diodes are compared to referenc...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
AIP Publishing LLC
2026-04-01
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| Series: | APL Electronic Devices |
| Acceso en liña: | https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0294724/20981595/026114_1_5.0294724.pdf |
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