Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE
In this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky superjunction diodes are compared to referenc...
Gorde:
| Egile Nagusiak: | , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
AIP Publishing LLC
2026-04-01
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| Saila: | APL Electronic Devices |
| Sarrera elektronikoa: | https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0294724/20981595/026114_1_5.0294724.pdf |
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