Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors

Abstract A reconfigurable logic‐in‐memory (R‐LIM) cell performs logic‐in‐memory functions as well as reconfigurable logic gates. The R‐LIM cell is constructed with triple‐gated (TG) feedback field‐effect transistors (FBFETs) that are reconfigured in n‐channel or p‐channel modes via electrostatic dop...

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Dades bibliogràfiques

Autors principals:	Jongseong Han, Jaemin Son, Juhee Jeon, Yunwoo Shin, Kyoungah Cho, Sangsig Kim
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2023-12-01
Col·lecció:	Advanced Electronic Materials
Matèries:	logic‐in‐memory positive feedback loops reconfigurable logic gates reconfigurable logic‐in‐memory cells triple‐gated feedback field‐effect transistors
Accés en línia:	https://doi.org/10.1002/aelm.202300526
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