Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors
Abstract A reconfigurable logic‐in‐memory (R‐LIM) cell performs logic‐in‐memory functions as well as reconfigurable logic gates. The R‐LIM cell is constructed with triple‐gated (TG) feedback field‐effect transistors (FBFETs) that are reconfigured in n‐channel or p‐channel modes via electrostatic dop...
Gorde:
| Egile Nagusiak: | , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Wiley-VCH
2023-12-01
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| Saila: | Advanced Electronic Materials |
| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1002/aelm.202300526 |
| Etiketak: |
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