Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor

In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic and memory operations of the LIM inverter were inve...

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Үндсэн зохиолчид:	Eunwoo Baek, Jaemin Son, Kyoungah Cho, Sangsig Kim
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2022-04-01
Цуврал:	Micromachines
Нөхцлүүд:	feedback field-effect transistor logic-in-memory mixed-mode simulation positive feedback loop silicon nanowire
Онлайн хандалт:	https://www.mdpi.com/2072-666X/13/4/590
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