Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor
In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic and memory operations of the LIM inverter were inve...
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| Principais autores: | , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2022-04-01
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| Serier: | Micromachines |
| Fag: | |
| Online adgang: | https://www.mdpi.com/2072-666X/13/4/590 |
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