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Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor

In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic and memory operations of the LIM inverter were inve...

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Principais autores: Eunwoo Baek, Jaemin Son, Kyoungah Cho, Sangsig Kim
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2022-04-01
Serier:Micromachines
Fag:
feedback field-effect transistor
logic-in-memory
mixed-mode simulation
positive feedback loop
silicon nanowire
Online adgang:https://www.mdpi.com/2072-666X/13/4/590
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