Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices. Feedback field-effect transistors (FBFETs) have great potential to overcome the scaling challenges because of their one-transistor (1T) memory be...
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| Автори: | , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2023-05-01
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| Серія: | Micromachines |
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| Онлайн доступ: | https://www.mdpi.com/2072-666X/14/6/1138 |
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