Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices. Feedback field-effect transistors (FBFETs) have great potential to overcome the scaling challenges because of their one-transistor (1T) memory be...

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Autori principali:	Juhee Jeon, Kyoungah Cho, Sangsig Kim
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2023-05-01
Serie:	Micromachines
Soggetti:	one-transistor dynamic random-access memory memory array silicon nanowire feedback field-effect transistor positive feedback mechanism
Accesso online:	https://www.mdpi.com/2072-666X/14/6/1138
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