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Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices

We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a set level. This method provides the capability to contro...

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Principais autores: Dmitrii V. Andreev, Vladimir V. Andreev, Marina Konuhova, Anatoli I. Popov
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2024-07-01
Serier:Technologies
Fag:
MIS device
gate dielectric
wafer-level testing
high-field
electron injection
time depend dielectric breakdown
Online adgang:https://www.mdpi.com/2227-7080/12/7/102
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