Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices

We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a set level. This method provides the capability to contro...

पूर्ण विवरण

ग्रंथसूची विवरण

मुख्य लेखकों:	Dmitrii V. Andreev, Vladimir V. Andreev, Marina Konuhova, Anatoli I. Popov
स्वरूप:	Artigo
भाषा:	Inglês
प्रकाशित:	MDPI AG 2024-07-01
श्रृंखला:	Technologies
विषय:	MIS device gate dielectric wafer-level testing high-field electron injection time depend dielectric breakdown
ऑनलाइन पहुंच:	https://www.mdpi.com/2227-7080/12/7/102
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