Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation
GaN-based Micro-LED has been widely regarded as the most promising candidate for next generation of revolutionary display technology due to its advantages of high efficiency, high brightness and high stability. However, the typical micro-fabrication process would leave a great number of damages on t...
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , |
|---|---|
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2022-12-01
|
| Collection: | Micromachines |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2072-666X/14/1/10 |
| Tags: |
Pas de tags, Soyez le premier à ajouter un tag!
|