Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation

GaN-based Micro-LED has been widely regarded as the most promising candidate for next generation of revolutionary display technology due to its advantages of high efficiency, high brightness and high stability. However, the typical micro-fabrication process would leave a great number of damages on t...

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מידע ביבליוגרפי

Principais autores:	Zhifang Zhu, Tao Tao, Bin Liu, Ting Zhi, Yang Chen, Junchi Yu, Di Jiang, Feifan Xu, Yimeng Sang, Yu Yan, Zili Xie, Rong Zhang
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2022-12-01
סדרה:	Micromachines
נושאים:	Micro-LED sidewall damage passivation process
גישה מקוונת:	https://www.mdpi.com/2072-666X/14/1/10
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