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Patterning Fidelity Enhancement and Aberration Mitigation in EUV Lithography Through Source–Mask Optimization

Extreme ultraviolet (EUV) lithography faces critical challenges in aberration control and patterning fidelity as technology nodes shrink below 3 nm. This work demonstrates how Source–Mask Optimization (SMO) simultaneously addresses both illumination and mask design to enhance pattern transfer accura...

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Principais autores: Qi Wang, Qiang Wu, Ying Li, Xianhe Liu, Yanli Li
פורמט: Artigo
שפה:Inglês
יצא לאור: MDPI AG 2025-10-01
סדרה:Micromachines
נושאים:
Source–Mask Optimization
computational lithography
lithography imaging model
pattern fidelity
aberration control
גישה מקוונת:https://www.mdpi.com/2072-666X/16/10/1166
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