The effect of thermal mechanical process on high purity 0.65 inch tantalum targets for advanced process chip

Tantalum (Ta)/Tantalum-Nitride (TaN) layers are extensively used as sputtering sources of copper–silicon (Cu–Si) diffusion barriers. The advanced process chips inclined toward requires high purity, and more economically efficient long lifetime 0.65 inch Ta sputtering target. In the present work, the...

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Detalhes bibliográficos

Principais autores:	Xuan Meng, Weihua Zhong, Qianjing Yuan, Hui Yang, Yanfang Wu, Qitao Huang, Lijun Yao, Yijun Bian
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IOP Publishing 2026-01-01
coleção:	Materials Research Express
Assuntos:	tantalum barrier layer sputtering target advanced process chip Ta grain size Ta grain orientation thermal mechanical process
Acesso em linha:	https://doi.org/10.1088/2053-1591/ae6ec2
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