Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC w...

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Hlavní autoři:	Wantang Wang, Xuesong Lu, Xinke Wu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2023-05-01
Edice:	Advanced Materials Interfaces
Témata:	4H silicon carbide chemical–mechanical polishing material removal rate surface roughness
On-line přístup:	https://doi.org/10.1002/admi.202202369
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