Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Abstract As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of G...

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Principais autores:	Xuanyi Zhao, Shouzhi Wang, Lei Liu, Qiubo Li, Jiaoxian Yu, Guodong Wang, Chang Liang, Zhongxin Wang, Han Hao, Xiangang Xu, Lei Zhang
Formato:	Artigo
Idioma:	Inglês
Publicado:	Wiley-VCH 2025-01-01
Series:	Advanced Materials Interfaces
Assuntos:	assisted enhanced CMP CMP GaN sustainable development
Acceso en liña:	https://doi.org/10.1002/admi.202301032
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