Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate
Abstract As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of G...
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| Principais autores: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley-VCH
2025-01-01
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| coleção: | Advanced Materials Interfaces |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/admi.202301032 |
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