Research on Internal Current Sharing of High-power IGBTs
In order to increase the rating current level of device, high power IGBT is often composed of multiple chips and subelements in parallel, and in this case, how to effectively control the current sharing within device is very important. It analysed the important influence of stray inductance on IGBTs...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Chinês |
| Cyhoeddwyd: |
Editorial Office of Control and Information Technology
2017-01-01
|
| Cyfres: | Kongzhi Yu Xinxi Jishu |
| Pynciau: | |
| Mynediad Ar-lein: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.007 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|