Turn-off Characteristics of MOSFET and IGBT and Its Influence on Parallel Connection
The different turn off characteristics of MOSFET and IGBT and their influence on the parallel current sharing characteristics at the moment of turn off were described. The common MOS gate structure of MOSFET and IGBT leads to similar turn-on characteristics in the device turn-on process. However, th...
Tallennettuna:
| Päätekijät: | , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Chinês |
| Julkaistu: |
Editorial Department of Electric Drive for Locomotives
2021-09-01
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| Sarja: | 机车电传动 |
| Aiheet: | |
| Linkit: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.015 |
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