Turn-off Characteristics of MOSFET and IGBT and Its Influence on Parallel Connection
The different turn off characteristics of MOSFET and IGBT and their influence on the parallel current sharing characteristics at the moment of turn off were described. The common MOS gate structure of MOSFET and IGBT leads to similar turn-on characteristics in the device turn-on process. However, th...
Kaydedildi:
| Asıl Yazarlar: | , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Chinês |
| Baskı/Yayın Bilgisi: |
Editorial Department of Electric Drive for Locomotives
2021-09-01
|
| Seri Bilgileri: | 机车电传动 |
| Konular: | |
| Online Erişim: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.015 |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|