Numerical investigation of ultrathin CIGS solar cells featuring SiO2/GaAs double rear passivation
Abstract In this work, we propose a modified GaAs/SiO2 based Double Rear Passivation (DRP) structure for CIGS solar cells. DRP essentially comprises two distinct mechanisms for reducing recombination at the solar cell’s rear. One component of the DRP is the incorporation of SiO2 at the end of the st...
שמור ב:
| Principais autores: | , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Portfolio
2026-01-01
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| סדרה: | Scientific Reports |
| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1038/s41598-025-34707-8 |
| תגים: |
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