Numerical investigation of ultrathin CIGS solar cells featuring SiO2/GaAs double rear passivation

Abstract In this work, we propose a modified GaAs/SiO2 based Double Rear Passivation (DRP) structure for CIGS solar cells. DRP essentially comprises two distinct mechanisms for reducing recombination at the solar cell’s rear. One component of the DRP is the incorporation of SiO2 at the end of the st...

Descripción completa

Detalles Bibliográficos

Autores principales:	Seyed Mohammad Hosein Jafari, Ali A. Orouji, Abdollah Abbasi
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Nature Portfolio 2026-01-01
Colección:	Scientific Reports
Materias:	CIGS solar cell Solar cell efficiency Ultrathin CIGS Rear passivation
Acceso en línea:	https://doi.org/10.1038/s41598-025-34707-8
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!