Review of Recent Progress on Vertical GaN-Based PN Diodes
Abstract As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been invest...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
SpringerOpen
2021-06-01
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| coleção: | Nanoscale Research Letters |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1186/s11671-021-03554-7 |
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