Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution

Spatially resolved photoluminescence at the sub-micro scale was used to study the optical non-uniformity of the micro-LED under varied power density excitation levels. The trend of the efficiency along injection levels were found to be highly dependent on the location of the chip mesa. The sidewall...

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Váldodahkkit:	Haifeng Yang, Yufeng Li, Jiawei Wang, Aixing Li, Kun Li, Chuangcheng Xu, Minyan Zhang, Zhenhuan Tian, Qiang Li, Feng Yun
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2023-07-01
Ráidu:	Nanomaterials
Fáttát:	micro-LED sidewall damage spatially resolved photoluminescence
Liŋkkat:	https://www.mdpi.com/2079-4991/13/13/2014
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