Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density

Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density output relative to a-IGZO source-gated transistor...

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Autors principals:	Jiaxin Liu, Shan Huang, Zhenyuan Xiao, Ning Li, Jaekyun Kim, Jidong Jin, Jiawei Zhang
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2025-01-01
Col·lecció:	Electronic Materials
Matèries:	amorphous indium–gallium–zinc oxide thin-film transistor source-gated transistor wrapping transistor current density
Accés en línia:	https://www.mdpi.com/2673-3978/6/1/2
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