Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density
Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density output relative to a-IGZO source-gated transistor...
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| Автори: | , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2025-01-01
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| Серія: | Electronic Materials |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2673-3978/6/1/2 |
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