On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs
In this work, we present the results of research on the off-current mechanism in vertical trench MOS devices manufactured on an ammonothermal substrate. Transistors and npn diode test structures were characterized electrically as well as by SEM and by AFM, which results compared to CAD simulations....
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , , , , , , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Elsevier
2025-06-01
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| Rangatū: | Power Electronic Devices and Components |
| Ngā marau: | |
| Urunga tuihono: | http://www.sciencedirect.com/science/article/pii/S2772370425000112 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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