Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large for ammonothermal growth of bulk GaN, an important...

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Principais autores:	Saskia Schimmel, Daisuke Tomida, Tohru Ishiguro, Yoshio Honda, Shigefusa Chichibu, Hiroshi Amano
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2021-03-01
coleção:	Crystals
Assuntos:	ammonothermal crystal growth numerical simulation gallium nitride computational fluid dynamics conjugated heat transfer
Acesso em linha:	https://www.mdpi.com/2073-4352/11/4/356
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