Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects
Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large for ammonothermal growth of bulk GaN, an important...
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| Главные авторы: | , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI AG
2021-03-01
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| Серии: | Crystals |
| Предметы: | |
| Online-ссылка: | https://www.mdpi.com/2073-4352/11/4/356 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
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