A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET

Abstract In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging from 300 to 700 K. The influence of...

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Bibliografische gegevens

Hoofdauteurs:	Neeraj Gupta, Rashmi Gupta, Rekha Yadav, Prashant Kumar, Lalit Rai
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	Springer 2024-12-01
Reeks:	Discover Applied Sciences
Onderwerpen:	Dielectric pocket Triple material Temperature Subthreshold GAA-MOSFET Transconductance
Online toegang:	https://doi.org/10.1007/s42452-024-06225-1
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