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A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET

Abstract In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging from 300 to 700 K. The influence of...

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Principais autores: Neeraj Gupta, Rashmi Gupta, Rekha Yadav, Prashant Kumar, Lalit Rai
Format: Artigo
Sprog:Inglês
Udgivet: Springer 2024-12-01
Serier:Discover Applied Sciences
Fag:
Dielectric pocket
Triple material
Temperature
Subthreshold
GAA-MOSFET
Transconductance
Online adgang:https://doi.org/10.1007/s42452-024-06225-1
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